At an event today in San Francisco, Intel announced one of the most important pieces of semiconductor news in many years: the company's upcoming 22nm processors will feature a fundamental change to ...

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...

As downward scaling of transistors continues, optimizing power consumption for mobile devices is a major concern. Power consumption consists of two components: dynamic and static. Dynamic (active) ...

One of the lost pleasures of our modern world is the experience of going shopping at a grocery store, a mall, or a drugstore, ...

Physicists in the UK have found a way to overcome a major barrier blocking the use of graphene in electronic devices – how to prevent current leaking through a device when it is switched off. Graphene ...

Semiconductor leakage paths can cause excessive quiescent current (also called ground current) in remote sensing applications. These leakage paths shorten battery life and become more critical because ...

Computers, despite all their apparent complexity, are basically just a large number of electronic switches, flicking on and off in the right order to process digital information. Semiconductor ...

Researchers develop a 3D transistor stacking process that boosts performance in flexible and wearable electronics without ...

(Nanowerk News) Scientists at the Fraunhofer Institute for Applied Solid State Physics IAF have succeeded in developing a novel type of transistor with extremely high cut-off frequencies: metal oxide ...

DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...