Abstract: The high-speed superiority of GaN power devices with silicon-based peripheral circuits is not yet fully leveraged, mainly due to the parasitic inductance of interconnections. In this article ...
Industry is adopting GaN HEMT in 10kW–100kW and higher power systems due to the ultra-fast switching capabilities of GaN. Paralleling GaN HEMT transistors is an appealing idea to further increase the ...
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