GaN technology is rapidly gaining traction as a cost-effective alternative to SiC, supported by extensive industry research and growing adoption across sectors.

As defense system requirements evolve, power conversion technology is advancing in step, driven by innovative suppliers leveraging new materials and design strategies to seize emerging opportunities.

When interleaved two-phase converters have imbalanced phase currents, the input harmonics change and switching frequency harmonics appear that can fall into the medium-wave band.

Introduction to FinFET Technology FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in semiconductor technology, marking a significant departure from traditional planar ...

Alpha and Omega Semiconductor Limited (AOS) has launched the AONK40202, a 25V MOSFET utilizing cutting-edge DFN3.3×3.3 Source-Down packaging technology. Engineered to support high power density in ...

STMicroelectronics has introduced the LEOPOL1, a point-of-load step-down converter engineered specifically for Low Earth Orbit (LEO) satellite applications, addressing the growing requirements of ...

Sanken Electric, a Japanese semiconductor company specializing in power electronics and analog ICs, has recently announced the acquisition of Powdec K.K., a firm focused on the development and ...

Texas Instruments (TI) has announced an investment exceeding $60 billion aimed at expanding semiconductor manufacturing in the United States. This initiative represents the largest investment in ...

This article, based on a presentation at APEC 2025, outlines PCB design recommendations tailored for converters incorporating GaN HEMTs.

Wise Integration has officially released its inaugural fully digital controller, WiseWare® 1.1 (WIW1101), developed around a 32-bit microcontroller (MCU). This breakthrough enables switching ...

The University of Michigan has been awarded significant funding to advance heat-tolerant SiC semiconductors from lab to fab.

EPC Space has introduced the EPC7030MSH, a 300 V radiation-hardened (RH) gallium nitride (GaN) field-effect transistor (FET) that sets a new benchmark for performance in high-voltage, high-power space ...